HMJE3055T Datasheet. Specs and Replacement

Type Designator: HMJE3055T  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO-220AB

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HMJE3055T datasheet

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HMJE3055T

Spec. No. HE6737 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperature Storage Temperature ..................................... See More ⇒

Detailed specifications: HMJE13003, HMJE13003D, HMJE13003E, HMJE13005, HMJE13007, HMJE13007A, HMJE13009A, HMJE2955T, TIP3055, HMPSA06, HMPSA42, HMPSA44, HMPSA92, HMPSA92M, HMPSA94, HPH2369, HPN2222A

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