HMJE3055T PDF Specs and Replacement
Type Designator: HMJE3055T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-220AB
HMJE3055T Substitution
HMJE3055T PDF detailed specifications
hmje3055t.pdf
Spec. No. HE6737 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperature Storage Temperature ..................................... See More ⇒
Detailed specifications: HMJE13003 , HMJE13003D , HMJE13003E , HMJE13005 , HMJE13007 , HMJE13007A , HMJE13009A , HMJE2955T , TIP3055 , HMPSA06 , HMPSA42 , HMPSA44 , HMPSA92 , HMPSA92M , HMPSA94 , HPH2369 , HPN2222A .
History: KT8107A2 | BC847CW | BC847BW | HMJE13007
Keywords - HMJE3055T pdf specs
HMJE3055T cross reference
HMJE3055T equivalent finder
HMJE3055T pdf lookup
HMJE3055T substitution
HMJE3055T replacement
