All Transistors. HSB1109 Datasheet

 

HSB1109 Datasheet and Replacement


   Type Designator: HSB1109
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-126ML
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HSB1109 Datasheet (PDF)

 ..1. Size:42K  hsmc
 hsb1109.pdf pdf_icon

HSB1109

Spec. No. : HE6607HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSB1109PNP EPITAXIAL PLANAR TRANSISTORFeatures Low frequency high voltage amplifier Complementary pair with HSD1609TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................................

 0.1. Size:51K  hsmc
 hsb1109s.pdf pdf_icon

HSB1109

Spec. No. : HE6514HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.02.14MICROELECTRONICS CORP.Page No. : 1/5HSB1109SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB1109S is designed for low frequency and high voltage amplifierapplications complementary pair with HSD1609S.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ................

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG332 | 2N2904 | DTC124EEB | ECG185 | 2SA1488 | NXP3875G | 2N5784

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