HSB1109 PDF Specs and Replacement
Type Designator: HSB1109
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-126ML
HSB1109 Substitution
HSB1109 PDF detailed specifications
hsb1109.pdf
Spec. No. HE6607 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features Low frequency high voltage amplifier Complementary pair with HSD1609 TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................................. See More ⇒
hsb1109s.pdf
Spec. No. HE6514 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.02.14 MICROELECTRONICS CORP. Page No. 1/5 HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ................... See More ⇒
Detailed specifications: HMPSA92 , HMPSA92M , HMPSA94 , HPH2369 , HPN2222A , HPN2907A , HSA1015 , HSA733 , 2SC2073 , HSB1109S , HSB649A , HSB649T , HSB772 , HSB772S , HSB857 , HSB857D , HSB857J .
History: BC847CW | HMJE13007 | BC847BW | KT8107A2 | HMJE3055T
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