HSB1109 Datasheet. Specs and Replacement

Type Designator: HSB1109  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-126ML

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HSB1109 datasheet

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HSB1109

Spec. No. HE6607 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features Low frequency high voltage amplifier Complementary pair with HSD1609 TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................................. See More ⇒

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HSB1109

Spec. No. HE6514 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.02.14 MICROELECTRONICS CORP. Page No. 1/5 HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ................... See More ⇒

Detailed specifications: HMPSA92, HMPSA92M, HMPSA94, HPH2369, HPN2222A, HPN2907A, HSA1015, HSA733, 2SC2073, HSB1109S, HSB649A, HSB649T, HSB772, HSB772S, HSB857, HSB857D, HSB857J

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