HSB772 Specs and Replacement
Type Designator: HSB772
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-126ML
HSB772 Transistor Equivalent Substitute - Cross-Reference Search
HSB772 detailed specifications
hsb772.pdf
Spec. No. HE6605 HI-SINCERITY Issued Date 1993.05.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/5 HSB772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperat... See More ⇒
hsb772s.pdf
Spec. No. HE6549 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.08.13 MICROELECTRONICS CORP. Page No. 1/5 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature..................... See More ⇒
Detailed specifications: HPN2222A , HPN2907A , HSA1015 , HSA733 , HSB1109 , HSB1109S , HSB649A , HSB649T , S8550 , HSB772S , HSB857 , HSB857D , HSB857J , HSC1815 , HSC945 , HSD1609 , HSD1609S .
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