HSB857 Datasheet. Specs and Replacement

Type Designator: HSB857  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-220AB

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HSB857 datasheet

 ..1. Size:41K  hsmc

 hsb857.pdf pdf_icon

HSB857

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................... See More ⇒

 ..2. Size:44K  cn haohai electr

 hsb857 2sb857.pdf pdf_icon

HSB857

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................... See More ⇒

 0.1. Size:43K  hsmc

 hsb857j.pdf pdf_icon

HSB857

Spec. No. HJ200101 HI-SINCERITY Issued Date 2001.09.01 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/4 HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................................................................................. See More ⇒

 0.2. Size:42K  hsmc

 hsb857d.pdf pdf_icon

HSB857

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................................................................................. See More ⇒

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Detailed specifications: HSA1015, HSA733, HSB1109, HSB1109S, HSB649A, HSB649T, HSB772, HSB772S, MJE340, HSB857D, HSB857J, HSC1815, HSC945, HSD1609, HSD1609S, HSD1616A, HSD313

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