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HSB857 PDF Specs and Replacement


   Type Designator: HSB857
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-220AB
 

 HSB857 Substitution

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HSB857 PDF detailed specifications

 ..1. Size:41K  hsmc
hsb857.pdf pdf_icon

HSB857

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................... See More ⇒

 ..2. Size:44K  cn haohai electr
hsb857 2sb857.pdf pdf_icon

HSB857

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................... See More ⇒

 0.1. Size:43K  hsmc
hsb857j.pdf pdf_icon

HSB857

Spec. No. HJ200101 HI-SINCERITY Issued Date 2001.09.01 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/4 HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................................................................................. See More ⇒

 0.2. Size:42K  hsmc
hsb857d.pdf pdf_icon

HSB857

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................................................................................. See More ⇒

Detailed specifications: HSA1015 , HSA733 , HSB1109 , HSB1109S , HSB649A , HSB649T , HSB772 , HSB772S , MJE340 , HSB857D , HSB857J , HSC1815 , HSC945 , HSD1609 , HSD1609S , HSD1616A , HSD313 .

History: HEPS9146 | 2SC2116 | HJ10387 | 2SA1815-5

Keywords - HSB857 pdf specs

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