CLD667 Specs and Replacement
Type Designator: CLD667
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-92
CLD667 Substitution
CLD667 detailed specifications
cld667 a.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667A TO-92 Plastic Package B C E Low Frequency Power Amplifier Complementary CLB647/CLB647A ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL CLD667 CLD667A UNITS VCBO Collector Base Voltage 120 120 V VCEO C... See More ⇒
Detailed specifications: CJF6388 , CJF6668 , CK100B , CK100S , CL100A , CL100B , CL100S , CLB764 , 2SD2499 , CLD667A , CLD863 , CMBA847E , CMBA847F , CMBA847G , CMBA857E , CMBA857F , CMBT200 .
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