All Transistors. CLD667 Datasheet

 

CLD667 Datasheet and Replacement


   Type Designator: CLD667
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-92
 

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CLD667 Datasheet (PDF)

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CLD667

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667ATO-92Plastic PackageBCELow Frequency Power AmplifierComplementary CLB647/CLB647AABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL CLD667 CLD667A UNITSVCBOCollector Base Voltage 120 120 VVCEOC

Datasheet: CJF6388 , CJF6668 , CK100B , CK100S , CL100A , CL100B , CL100S , CLB764 , TIP42 , CLD667A , CLD863 , CMBA847E , CMBA847F , CMBA847G , CMBA857E , CMBA857F , CMBT200 .

Keywords - CLD667 transistor datasheet

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