CMBTH10 Datasheet. Specs and Replacement

Type Designator: CMBTH10  📄📄 

SMD Transistor Code: 3E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.004 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT-23

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CMBTH10 datasheet

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CMBTH10

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 Marking Code = 3E VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCEO V 25 VCBO Collector Base ... See More ⇒

Detailed specifications: CMBT9015D, CMBT918, CMBTA05, CMBTA06, CMBTA13, CMBTA14, CMBTA55, CMBTA56, C5198, CML1207, CMMT451, CMMT491, CMMT493, CMMT495, CMMT551, CMMT591, CMMT591A

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