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CMBTH10 Specs and Replacement


   Type Designator: CMBTH10
   SMD Transistor Code: 3E
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.004 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 650 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT-23
 

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CMBTH10 datasheet

 ..1. Size:132K  cdil
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CMBTH10

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 Marking Code = 3E VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCEO V 25 VCBO Collector Base ... See More ⇒

Detailed specifications: CMBT9015D , CMBT918 , CMBTA05 , CMBTA06 , CMBTA13 , CMBTA14 , CMBTA55 , CMBTA56 , C5198 , CML1207 , CMMT451 , CMMT491 , CMMT493 , CMMT495 , CMMT551 , CMMT591 , CMMT591A .

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