CSB1626 Datasheet. Specs and Replacement

Type Designator: CSB1626  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 110 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: TO-220

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CSB1626 datasheet

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CSB1626

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626 TO-220 Plastic Package Complementary CSD2495 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage(open emitter) VCBO 110 V Collector -Emitter Voltage(open base) VCEO 110 V Emitter Base Voltage(open col... See More ⇒

Detailed specifications: CSB1426Q, CSB1426R, CSB1436, CSB1436P, CSB1436Q, CSB1436R, CSB1516, CSB1535, 13009, CSB546, CSB546O, CSB546R, CSB546Y, CSB564A, CSB564AG, CSB564AO, CSB564AY

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