CSB1626 Datasheet, Equivalent, Cross Reference Search
Type Designator: CSB1626
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO-220
CSB1626 Transistor Equivalent Substitute - Cross-Reference Search
CSB1626 Datasheet (PDF)
..1. Size:307K cdil
csb1626.pdf
csb1626.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626TO-220Plastic PackageComplementary CSD2495ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage(open emitter) VCBO 110 VCollector -Emitter Voltage(open base) VCEO 110 VEmitter Base Voltage(open col
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KTC8550 | KTA1266L | 2SA1285A | RT1P250S | BC557BBK
