All Transistors. CSB1626 Datasheet

 

CSB1626 Datasheet and Replacement


   Type Designator: CSB1626
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 55 pF
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO-220
 

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CSB1626 Datasheet (PDF)

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CSB1626

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626TO-220Plastic PackageComplementary CSD2495ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage(open emitter) VCBO 110 VCollector -Emitter Voltage(open base) VCEO 110 VEmitter Base Voltage(open col

Datasheet: CSB1426Q , CSB1426R , CSB1436 , CSB1436P , CSB1436Q , CSB1436R , CSB1516 , CSB1535 , BC548 , CSB546 , CSB546O , CSB546R , CSB546Y , CSB564A , CSB564AG , CSB564AO , CSB564AY .

Keywords - CSB1626 transistor datasheet

 CSB1626 cross reference
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