All Transistors. CSB1626 Datasheet

 

CSB1626 Datasheet, Equivalent, Cross Reference Search


   Type Designator: CSB1626
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 55 pF
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO-220

 CSB1626 Transistor Equivalent Substitute - Cross-Reference Search

   

CSB1626 Datasheet (PDF)

 ..1. Size:307K  cdil
 csb1626.pdf

CSB1626 CSB1626

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR CSB1626TO-220Plastic PackageComplementary CSD2495ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage(open emitter) VCBO 110 VCollector -Emitter Voltage(open base) VCEO 110 VEmitter Base Voltage(open col

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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