All Transistors. CSB621Q Datasheet

 

CSB621Q Datasheet, Equivalent, Cross Reference Search


   Type Designator: CSB621Q
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO-92

 CSB621Q Transistor Equivalent Substitute - Cross-Reference Search

   

CSB621Q Datasheet (PDF)

 8.1. Size:238K  cdil
 csb621 621a q r s.pdf

CSB621Q CSB621Q

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS CSB621, CSB621ATO-92Plastic PackageBCEAF Output AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL CSB621 CSB621A UNITSVCEOCollector Emitter Voltage 25 50 VVCBOCollector Base Voltage 30 60 VVEBOEmitter Base Voltage 5.0 VI

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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