CSD2470 Datasheet. Specs and Replacement

Type Designator: CSD2470  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 170 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: TO-92

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CSD2470 datasheet

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CSD2470

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package B C E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 15 V VCEO Collector Emitter Voltage 10 V VEBO Emitter Base Voltage 7.0 V IC Collector Current 5.0 A *ICP Collector Current Peak... See More ⇒

Detailed specifications: CSCL2383, CSCL2482, CSD1468, CSD1468Q, CSD1468R, CSD1468S, CSD1489B, CSD1733, A42, CSD362, CSD362N, CSD362O, CSD362R, CSD363, CSD363O, CSD363R, CSD363Y

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