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CSD2470 Specs and Replacement


   Type Designator: CSD2470
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 170 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: TO-92
 

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CSD2470 datasheet

 ..1. Size:235K  cdil
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CSD2470

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package B C E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 15 V VCEO Collector Emitter Voltage 10 V VEBO Emitter Base Voltage 7.0 V IC Collector Current 5.0 A *ICP Collector Current Peak... See More ⇒

Detailed specifications: CSCL2383 , CSCL2482 , CSD1468 , CSD1468Q , CSD1468R , CSD1468S , CSD1489B , CSD1733 , A42 , CSD362 , CSD362N , CSD362O , CSD362R , CSD363 , CSD363O , CSD363R , CSD363Y .

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