CVL639 Datasheet. Specs and Replacement

Type Designator: CVL639  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 135 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO-92

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CVL639 datasheet

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CVL639

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CVL639 PNP CVL640 TO-92 Plastic Package E CB Driver Stages of Audio Amplifier Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 150 V VCEO Collector Emitter Voltage 135 V VEBO Emitter Base Voltage 5.0 ... See More ⇒

Detailed specifications: CSD882, CSD882E, CSD882P, CSD882Q, CSD882R, CSDL468, CSL13003, CTU83, S8550, CVL640, MZT3055, P2N2369, P2N2369A, P2N2907A, PN100, PN200, 2CF2325

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