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MZT3055 PDF Specs and Replacement


   Type Designator: MZT3055
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 6 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT-223
 

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MZT3055 PDF detailed specifications

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MZT3055

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 60 V VCBO Collector... See More ⇒

Detailed specifications: CSD882P , CSD882Q , CSD882R , CSDL468 , CSL13003 , CTU83 , CVL639 , CVL640 , TIP42 , P2N2369 , P2N2369A , P2N2907A , PN100 , PN200 , 2CF2325 , SL100 , 2N23867 .

History: NA22Y | NA21YJ | NA12F | NA02EI | NA11FY | NA11FG

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