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MZT3055 Datasheet, Equivalent, Cross Reference Search

Type Designator: MZT3055

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 6 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SOT-223

MZT3055 Transistor Equivalent Substitute - Cross-Reference Search

 

MZT3055 Datasheet (PDF)

1.1. mzt3055 mzt2955.pdf Size:186K _cdil

MZT3055
MZT3055

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 60 V VCBO Collector Ba

Datasheet: CSD882P , CSD882Q , CSD882R , CSDL468 , CSL13003 , CTU83 , CVL639 , CVL640 , B772 , P2N2369 , P2N2369A , P2N2907A , PN100 , PN200 , 2CF2325 , SL100 , 2N23867 .

 


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