MZT3055 Datasheet. Specs and Replacement

Type Designator: MZT3055  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 6 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SOT-223

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MZT3055 datasheet

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MZT3055

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 60 V VCBO Collector... See More ⇒

Detailed specifications: CSD882P, CSD882Q, CSD882R, CSDL468, CSL13003, CTU83, CVL639, CVL640, BD135, P2N2369, P2N2369A, P2N2907A, PN100, PN200, 2CF2325, SL100, 2N23867

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