BU908F Datasheet. Specs and Replacement

Type Designator: BU908F  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 34 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO-3P

  📄📄 Copy 

 BU908F Substitution

- BJT ⓘ Cross-Reference Search

 

BU908F datasheet

 ..1. Size:235K  cdil

 bu908f.pdf pdf_icon

BU908F

... See More ⇒

 9.1. Size:215K  inchange semiconductor

 bu908.pdf pdf_icon

BU908F

isc Silicon NPN Power Transistor BU908 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒

Detailed specifications: SL100, 2N23867, 2N3055HV, 2N6371HV, A1941, BD237S, BD675BPL, BF422BPL, BC639, BUF508A, BUX84A, C5198, CD13002, CD81, CD83, CDL13005, CDL13005D

Keywords - BU908F pdf specs

 BU908F cross reference

 BU908F equivalent finder

 BU908F pdf lookup

 BU908F substitution

 BU908F replacement