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BU908F Specs and Replacement

Type Designator: BU908F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 34 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO-3P

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BU908F datasheet

 ..1. Size:235K  cdil

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BU908F

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 9.1. Size:215K  inchange semiconductor

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BU908F

isc Silicon NPN Power Transistor BU908 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒

Detailed specifications: SL100 , 2N23867 , 2N3055HV , 2N6371HV , A1941 , BD237S , BD675BPL , BF422BPL , 2SD669A , BUF508A , BUX84A , C5198 , CD13002 , CD81 , CD83 , CDL13005 , CDL13005D .

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