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CSB507E Specs and Replacement


   Type Designator: CSB507E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-220

 CSB507E Transistor Equivalent Substitute - Cross-Reference Search

   

CSB507E detailed specifications

 8.1. Size:240K  cdil
 csb507 csd313.pdf pdf_icon

CSB507E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB507, CSD313 CSB507 PNP PLASTIC POWER TRANSISTOR CSD313 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83... See More ⇒

Detailed specifications: CSB1086B , CSB1086N , CSB1086P , CSB1086Q , CSB1086R , CSB507 , CSB507C , CSB507D , TIP42C , CSB507F , CSB624 , CSB817F , CSB817OF , CSB817YF , CSB834 , CSB834O , CSB834Y .

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