2SC5111 Datasheet. Specs and Replacement

Type Designator: 2SC5111  📄📄 

SMD Transistor Code: MD_ME

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.06 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 4000 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: 2-2H1A

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2SC5111 datasheet

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2SC5111

2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature... See More ⇒

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2sc5111ft.pdf pdf_icon

2SC5111

2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction tempera... See More ⇒

Detailed specifications: 2SC5091, 2SC5093, 2SC5094, 2SC5097, 2SC5098, 2SC5104, 2SC5109, 2SC5110, BC547B, 2SC5121, 2SC5125, 2SC5127, 2SC5127A, 2SC5136, 2SC5137, 2SC5138, 2SC5139

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