All Transistors. 2SC5111 Datasheet

 

2SC5111 Datasheet and Replacement


   Type Designator: 2SC5111
   SMD Transistor Code: MD_ME
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 4000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: 2-2H1A
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2SC5111 Datasheet (PDF)

 ..1. Size:245K  toshiba
 2sc5111.pdf pdf_icon

2SC5111

2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction temperature

 0.1. Size:132K  toshiba
 2sc5111ft.pdf pdf_icon

2SC5111

2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction tempera

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 2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf pdf_icon

2SC5111

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 2sc50x 2sc51x 2sc52x 2sc511 2sc513 2sc530.pdf pdf_icon

2SC5111

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Keywords - 2SC5111 transistor datasheet

 2SC5111 cross reference
 2SC5111 equivalent finder
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