2SA1978 Datasheet. Specs and Replacement

Type Designator: 2SA1978  📄📄 

SMD Transistor Code: T93

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4000 MHz

Collector Capacitance (Cc): 0.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 3MM

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2SA1978 datasheet

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2SA1978

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High f (in milimeters) T _ 2.8+0.2 f = 5.5 GHz TYP. T +0.1 S 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.15 21e CE C High speed switching characteristics Equivalent NPN transistor is the 2SC2... See More ⇒

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2SA1978

Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16... See More ⇒

Detailed specifications: 2SA1960, 2SA1961, 2SA1963, 2SA1964, 2SA1965, 2SA1969, 2SA1973, 2SA1977, 2N3904, 2SA1979, 2SA1982, 2SA1989, 2SA1993, 2SA2004, 2SA2005, 2SA2007, 2SA2009

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