2SA1982 Datasheet. Specs and Replacement

Type Designator: 2SA1982  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 130

Noise Figure, dB: -

Package: MT2

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2SA1982 datasheet

 ..1. Size:42K  panasonic

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2SA1982

Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC5346 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. 0.65 max. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Mak... See More ⇒

 ..2. Size:37K  panasonic

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2SA1982

Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC5346 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. 0.65 max. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Mak... See More ⇒

 8.1. Size:173K  toshiba

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2SA1982

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2SA1982

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Detailed specifications: 2SA1963, 2SA1964, 2SA1965, 2SA1969, 2SA1973, 2SA1977, 2SA1978, 2SA1979, 2N5551, 2SA1989, 2SA1993, 2SA2004, 2SA2005, 2SA2007, 2SA2009, 2SA2010, 2SA2011

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