MPSW3725 Datasheet. Specs and Replacement

Type Designator: MPSW3725  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-226

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MPSW3725 datasheet

 ..1. Size:67K  fairchild semi

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MPSW3725

MPSW3725 TO-226 C B E NPN Transistor This device is designed for high current, low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 1.2 A -55 to +15... See More ⇒

Detailed specifications: MMBT4401K, MMBT4403K, MMBT5770, MMBTH10RG, MMBTH11, MMBTH34, MP4501, MP4504, BC327, NTE291, NTE292, NZT560, NZT560A, NZT605, NZT651, NZT660, NZT660A

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