STS8550 Datasheet and Replacement
Type Designator: STS8550
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO-92
STS8550 Substitution
STS8550 Datasheet (PDF)
sts8550.pdf

STS8550SemiconductorSemiconductorPNP Silicon TransistorDescriptions High current application Radio in class B push-pull operationFeature Complementary pair with STS8050Ordering InformationType NO. Marking Package Code STS8550 STS8550 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54 Typ.1 2 3PIN Conn
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC3896 | ZXTP2013Z | NB111H | 2SA603 | NA41WI | 2SB178B | NB111EI
Keywords - STS8550 transistor datasheet
STS8550 cross reference
STS8550 equivalent finder
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STS8550 replacement
History: 2SC3896 | ZXTP2013Z | NB111H | 2SA603 | NA41WI | 2SB178B | NB111EI



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