STS8550 Datasheet. Specs and Replacement

Type Designator: STS8550  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO-92

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STS8550 datasheet

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STS8550

STS8550 Semiconductor Semiconductor PNP Silicon Transistor Descriptions High current application Radio in class B push-pull operation Feature Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06 0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Conn... See More ⇒

Detailed specifications: PUA3117, PUA3228, PZTA29, SD1391, SD1398, SJ5436, SJ5437, SJ5439, BD778, TN3019A, TN3440A, TN4033A, TN5320A, TN5415A, TN6705A, TN6707A, TN6716A

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