All Transistors. HBNP54S6R Datasheet

 

HBNP54S6R Datasheet and Replacement


   Type Designator: HBNP54S6R
   SMD Transistor Code: KNM
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 180(160) V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-363
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HBNP54S6R Datasheet (PDF)

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HBNP54S6R

Spec. No. : C904S6R Issued Date : 2013.10.21 CYStech Electronics Corp.Revised Date : Page No. : 1/9 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP54S6R Features Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminati

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HBNP54S6R

Spec. No. : C627G6 Issued Date : 2013.10.17 CYStech Electronics Corp.Revised Date : Page No. : 1/9 NPN AND PNP Dual Epitaxial Planar Transistors HBNP5213G6 Features High BV CEO High current Excellent DC current gain characteristics Pb-free lead plating and halogen-free package Equivalent Circuit Outline HBNP5213G6 TSOP-6 C2 E1 C1 B2 E2 B :

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ZT61 | 2SD1376 | R8066 | C8050C | 3DA150C | PBHV9040X | ECG95

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