All Transistors. HBNPZ1NS6R Datasheet

 

HBNPZ1NS6R Datasheet and Replacement


   Type Designator: HBNPZ1NS6R
   SMD Transistor Code: BF
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80(60) MHz
   Collector Capacitance (Cc): 2(4) pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-363R
 

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HBNPZ1NS6R Datasheet (PDF)

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HBNPZ1NS6R

Spec. No. : C901S6R Issued Date : 2009.06.05 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNPZ1NS6R Features Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut

Datasheet: HBN3101S6R , HBNP45C6 , HBNP45S6R , HBNP54S6R , HBNP1268Q8 , HBNP2227S6R , HBNP3946S6R , HBNP5213G6 , D880 , HBP1036S6R , HBP1037C6 , HBP1037S5 , HBP1037S6R , HBP2907S6R , HQN2498QF , HQP1498QF , PZT2222AL3 .

History: 2SB772-Y | FE2919 | GT44 | BF969 | MPS6542 | CV7346A-O | KRC882T

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