All Transistors. HBNPZ1NS6R Datasheet

 

HBNPZ1NS6R Datasheet, Equivalent, Cross Reference Search


   Type Designator: HBNPZ1NS6R
   SMD Transistor Code: BF
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80(60) MHz
   Collector Capacitance (Cc): 2(4) pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-363R

 HBNPZ1NS6R Transistor Equivalent Substitute - Cross-Reference Search

   

HBNPZ1NS6R Datasheet (PDF)

 ..1. Size:191K  cystek
 hbnpz1ns6r.pdf

HBNPZ1NS6R HBNPZ1NS6R

Spec. No. : C901S6R Issued Date : 2009.06.05 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNPZ1NS6R Features Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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