All Transistors. HBNPZ1NS6R Datasheet

 

HBNPZ1NS6R Datasheet and Replacement


   Type Designator: HBNPZ1NS6R
   SMD Transistor Code: BF
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80(60) MHz
   Collector Capacitance (Cc): 2(4) pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-363R
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HBNPZ1NS6R Datasheet (PDF)

 ..1. Size:191K  cystek
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HBNPZ1NS6R

Spec. No. : C901S6R Issued Date : 2009.06.05 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNPZ1NS6R Features Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PNTET50V01 | BF693P | RCA1A03 | BFN27 | BF850BF | GES6004 | KT8107D

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