HBNPZ1NS6R Datasheet. Specs and Replacement

Type Designator: HBNPZ1NS6R  📄📄 

SMD Transistor Code: BF

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6(5) V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80(60) MHz

Collector Capacitance (Cc): 2(4) pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT-363R

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HBNPZ1NS6R datasheet

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HBNPZ1NS6R

Spec. No. C901S6R Issued Date 2009.06.05 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNPZ1NS6R Features Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut ... See More ⇒

Detailed specifications: HBN3101S6R, HBNP45C6, HBNP45S6R, HBNP54S6R, HBNP1268Q8, HBNP2227S6R, HBNP3946S6R, HBNP5213G6, 2N4401, HBP1036S6R, HBP1037C6, HBP1037S5, HBP1037S6R, HBP2907S6R, HQN2498QF, HQP1498QF, PZT2222AL3

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