All Transistors. 159NT1D Datasheet

 

159NT1D Datasheet and Replacement


   Type Designator: 159NT1D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
 

 159NT1D Substitution

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159NT1D Datasheet (PDF)

 8.1. Size:78K  onsemi
 ntljs4159n ntljs4159nt1g.pdf pdf_icon

159NT1D

NTLJS4159NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

 8.2. Size:444K  russia
 k129nt1 k159nt1 b1129nt1.pdf pdf_icon

159NT1D

2002 1291-1, 1591, 11291-1, 11291 RD ALFA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Keywords - 159NT1D transistor datasheet

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