159NT1E Datasheet. Specs and Replacement

Type Designator: 159NT1E  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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159NT1E datasheet

 8.1. Size:78K  onsemi

 ntljs4159n ntljs4159nt1g.pdf pdf_icon

159NT1E

NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V... See More ⇒

 8.2. Size:444K  russia

 k129nt1 k159nt1 b1129nt1.pdf pdf_icon

159NT1E

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Detailed specifications: K129NT1D-1, K129NT1E-1, K129NT1ZH-1, 159NT1A, 159NT1B, 159NT1V, 159NT1G, 159NT1D, BC549, K159NT1A, K159NT1B, K159NT1V, K159NT1G, K159NT1D, K159NT1E, 1129NTV1, B1129NT1V-1

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