T5610 Datasheet. Specs and Replacement

Type Designator: T5610  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 38 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92L

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T5610 datasheet

 0.1. Size:186K  lge

 tpt5610.pdf pdf_icon

T5610

TPT5610 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO -25 V Collector- Base Voltage 14.200 VCEO -20 ... See More ⇒

 0.2. Size:447K  can-sheng

 t5610-92l.pdf pdf_icon

T5610

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92L Plastic-Encapsulate Transistors TO-92L 5610 TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5609 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter... See More ⇒

 0.3. Size:138K  blue-rocket-elect

 hit5610.pdf pdf_icon

T5610

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Detailed specifications: K159NT1D, K159NT1E, 1129NTV1, B1129NT1V-1, CS13001, CS13002, CS13003, T5609, BD136, TPT5609, TPT5610, 2SC4977, 2SA1013T, 2SA1015M, 2SA1577W, 2SA1930I, 2SA2050

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