T5610
Datasheet, Equivalent, Cross Reference Search
Type Designator: T5610
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75
W
Maximum Collector-Base Voltage |Vcb|: 25
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 350
MHz
Collector Capacitance (Cc): 38
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO92L
T5610
Transistor Equivalent Substitute - Cross-Reference Search
T5610
Datasheet (PDF)
0.1. Size:186K lge
tpt5610.pdf 
TPT5610 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features Excellent linearity of Current Gain 7.8008.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO -25 V Collector- Base Voltage 14.200VCEO -20
0.2. Size:447K can-sheng
t5610-92l.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.comTO-92L Plastic-Encapsulate TransistorsTO-92L 5610 TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5609 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter
0.3. Size:138K blue-rocket-elect
hit5610.pdf
HIT5610(3CG5610) PNP /SILICON PNP TRANSISTOR :, Purpose: Power amplifier and switching electronic application, governor applications. :, HIT5609(3DG5609) Features: Low saturation voltage, complementary pair with HIT5609(3DG5609). /Absolute maximum ratings(Ta=25
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
