All Transistors. T5610 Datasheet

 

T5610 Datasheet and Replacement


   Type Designator: T5610
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 38 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92L
 

 T5610 Substitution

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T5610 Datasheet (PDF)

 0.1. Size:186K  lge
 tpt5610.pdf pdf_icon

T5610

TPT5610 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features Excellent linearity of Current Gain 7.8008.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO -25 V Collector- Base Voltage 14.200VCEO -20

 0.2. Size:447K  can-sheng
 t5610-92l.pdf pdf_icon

T5610

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.comTO-92L Plastic-Encapsulate TransistorsTO-92L 5610 TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5609 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

 0.3. Size:138K  blue-rocket-elect
 hit5610.pdf pdf_icon

T5610

HIT5610(3CG5610) PNP /SILICON PNP TRANSISTOR :, Purpose: Power amplifier and switching electronic application, governor applications. :, HIT5609(3DG5609) Features: Low saturation voltage, complementary pair with HIT5609(3DG5609). /Absolute maximum ratings(Ta=25

Datasheet: K159NT1D , K159NT1E , 1129NTV1 , B1129NT1V-1 , CS13001 , CS13002 , CS13003 , T5609 , BD136 , TPT5609 , TPT5610 , 2SC4977 , 2SA1013T , 2SA1015M , 2SA1577W , 2SA1930I , 2SA2050 .

History: DTL3204 | T2610 | BCW71 | MJF3055G | MMBTA14L | MMBT491 | BUX25S

Keywords - T5610 transistor datasheet

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