All Transistors. LX8050QLT1G Datasheet

 

LX8050QLT1G Datasheet and Replacement


   Type Designator: LX8050QLT1G
   SMD Transistor Code: X8C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT23
      - BJT Cross-Reference Search

   

LX8050QLT1G Datasheet (PDF)

 ..1. Size:64K  lrc
 lx8050qlt1g.pdf pdf_icon

LX8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLX8050PLT1GNPN Silicon SeriesS-LX8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.5A. Epitaxial planar type.3 NPN complement: LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1Control Change Requirements; AEC-Q101 Qualified and PPAP

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DMC364A6 | AC166 | KSD5741 | 2SD601A | MM3725 | 2SC5489 | DMA364A5

Keywords - LX8050QLT1G transistor datasheet

 LX8050QLT1G cross reference
 LX8050QLT1G equivalent finder
 LX8050QLT1G lookup
 LX8050QLT1G substitution
 LX8050QLT1G replacement

 

 
Back to Top

 


 
.