LX8050QLT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LX8050QLT1G
SMD Transistor Code: X8C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT23
LX8050QLT1G Transistor Equivalent Substitute - Cross-Reference Search
LX8050QLT1G Datasheet (PDF)
..1. Size:64K lrc
lx8050qlt1g.pdf
lx8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLX8050PLT1GNPN Silicon SeriesS-LX8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.5A. Epitaxial planar type.3 NPN complement: LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1Control Change Requirements; AEC-Q101 Qualified and PPAP
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
