LX8050QLT1G Datasheet. Specs and Replacement
Type Designator: LX8050QLT1G 📄📄
SMD Transistor Code: X8C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 150
Package: SOT23
📄📄 Copy
LX8050QLT1G Substitution
- BJT ⓘ Cross-Reference Search
LX8050QLT1G datasheet
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LX8050PLT1G NPN Silicon Series S-LX8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.5A. Epitaxial planar type. 3 NPN complement LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PPAP... See More ⇒
Detailed specifications: LBC848BWT1G, LBC848CDW1T1G, LBC848CLT1G, LBC848CPDW1T1G, LBC848CWT1G, LBC850BLT1G, LBC850BWT1G, LBC850CLT1G, TIP35C, LBSS4240LT1G, LBSS5240LT1G, LH8050QLT1G, LH8550QLT1G, LMBTH10LT1G, LMBTH10QLT1G, LMBTH10WT1G, LBC856ALT1G
Keywords - LX8050QLT1G pdf specs
LX8050QLT1G cross reference
LX8050QLT1G equivalent finder
LX8050QLT1G pdf lookup
LX8050QLT1G substitution
LX8050QLT1G replacement
