FTB1261 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTB1261
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO252 DPAK
FTB1261 Transistor Equivalent Substitute - Cross-Reference Search
FTB1261 Datasheet (PDF)
ftb1261.pdf
SEMICONDUCTORFTB1261TECHNICAL DATAFTB1261 TRANSISTOR (PNP) AICJFEATURES Low VCE(sat) High DC Current Gain DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HMAXIMUM RATINGS (Ta=25 unless otherwise noted) H 1 00 MAXI 2 30 0 2F F LJ 0 5 0 1Symbol Parameter Value Unit L 0 50 0 101 2 3O 1 6
ftb1260.pdf
SEMICONDUCTORFTB1260TECHNICAL DATAACHFTB1260 TRANSISTOR (PNP) GFEATURES DD Power Transistor KF F High Voltage and Current DIM MILLIMETERSA 4.70 MAX_+ Low Collector-emitter saturation voltage B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10 Complements the FTD1898 E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
