All Transistors. FTB834 Datasheet

 

FTB834 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FTB834
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220AB

 FTB834 Transistor Equivalent Substitute - Cross-Reference Search

   

FTB834 Datasheet (PDF)

 ..1. Size:233K  first silicon
 ftb834.pdf

FTB834 FTB834

SEMICONDUCTORFTB834TECHNICAL DATA FTB834 TRANSISTOR (PNP) AOFEATURES C Low Collector -Emitter Saturation Voltage FE VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A BDIM MILLIMETERS DC current Gain A 10.15 0.15 B 15.30 MAX hFE =60-200@ IC=0.5A C 1.3+0.1/-0.15PD 0.8 0.1 Complementary to NPN FTD880 E 3.8 0.2F 2.7 0.2JH 0.4 0.15MAXIMUM RATINGS (T

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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