FTB834 Datasheet. Specs and Replacement

Type Designator: FTB834  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220AB

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FTB834 datasheet

 ..1. Size:233K  first silicon

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FTB834

SEMICONDUCTOR FTB834 TECHNICAL DATA FTB834 TRANSISTOR (PNP) A O FEATURES C Low Collector -Emitter Saturation Voltage F E VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A B DIM MILLIMETERS DC current Gain A 10.15 0.15 B 15.30 MAX hFE =60-200@ IC=0.5A C 1.3+0.1/-0.15 P D 0.8 0.1 Complementary to NPN FTD880 E 3.8 0.2 F 2.7 0.2 J H 0.4 0.15 MAXIMUM RATINGS (T... See More ⇒

Detailed specifications: FTB1386, FTB1412, FTB1424, FTB5240, FTB649A, FTB772, FTB772D, FTB772F, TIP41C, FTC1008, FTC1027, FTC1318, FTC1675, FTC1815, FTC2316, FTC2328A, FTC2330

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