FTD1899 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTD1899
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO252 DPAK
FTD1899 Transistor Equivalent Substitute - Cross-Reference Search
FTD1899 Datasheet (PDF)
ftd1899.pdf
SEMICONDUCTORFTD1899TECHNICAL DATAFTD1899 TRANSISTOR (NPN) FEATURES AICJ Low VCE(sat) High Transition Frequency DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 2 70 0 2F 2 30 0 1HH 1 00 MAXSymbol Parameter Value UnitI 2 30 0 2LF FVCBO Collector-Base Voltage 60 V J 0
ftd1898.pdf
SEMICONDUCTORFTD1898TECHNICAL DATAACHGFTD1898 TRANSISTOR (NPN) FEATURES DDK High Breakdown Voltage and Current F FDIM MILLIMETERS Excellent DC Current Gain Linearity A 4.70 MAX_+B 2.50 0.20 Complement the FTB1260 C 1.70 MAX1 2 3D 0.45+0.15/-0.10 Low Collector-Emitter Saturation Voltage E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
