FTD2118 Datasheet. Specs and Replacement
Type Designator: FTD2118 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 120
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FTD2118 datasheet
SEMICONDUCTOR FTD2118 TECHNICAL DATA FTD2118 TRANSISTOR (NPN) FEATURES A I C J Low VCE(sat). Excellent DC Current Gain Characteristics. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 MAXIMUM RATINGS (Ta=25 ) C 5 20 0 2 D 1 50 0 2 Symbol Parameter Value Unit E 2 70 0 2 F 2 30 0 1 H VCBO Collector-Base Voltage 50 V H 1 00 MAX I 2 30 0 2 L F F VCEO Col... See More ⇒
SEMICONDUCTOR FTD2114K TECHNICAL DATA Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. 3 hFE = 1200 (Typ.) 2) High emitter-base voltage. 2 VEBO =12V (Min.) 1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) SOT 23 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. COLLECTOR Absolute maximum rating... See More ⇒
Detailed specifications: FTD1781K, FTD1898, FTD1899, FTD2058, FTD2058F, FTD2097, FTD2098, FTD2114K, BC556, FTD4240, FTD880, FTD882, FTD882D, FTD882F, MJD122I, MJE13002B, MJE13003A
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