All Transistors. FTD2118 Datasheet

 

FTD2118 Datasheet and Replacement


   Type Designator: FTD2118
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO252 DPAK
 

 FTD2118 Substitution

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FTD2118 Datasheet (PDF)

 ..1. Size:325K  first silicon
 ftd2118.pdf pdf_icon

FTD2118

SEMICONDUCTORFTD2118TECHNICAL DATAFTD2118 TRANSISTOR (NPN) FEATURES AICJ Low VCE(sat). Excellent DC Current Gain Characteristics. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2MAXIMUM RATINGS (Ta=25)C 5 20 0 2D 1 50 0 2Symbol Parameter Value Unit E 2 70 0 2F 2 30 0 1HVCBO Collector-Base Voltage 50 V H 1 00 MAXI 2 30 0 2LF FVCEO Col

 8.1. Size:1582K  first silicon
 ftd2114k.pdf pdf_icon

FTD2118

SEMICONDUCTORFTD2114KTECHNICAL DATAEpitaxial planar typeNPN silicon transistorFeatures1) High DC current gain.3hFE = 1200 (Typ.)2) High emitter-base voltage.2VEBO =12V (Min.)13) Low VCE (sat).VCE (sat) = 0.18V (Typ.) SOT 23(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.COLLECTORAbsolute maximum rating

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DTA143XC3 | TK253A

Keywords - FTD2118 transistor datasheet

 FTD2118 cross reference
 FTD2118 equivalent finder
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