All Transistors. BU3150T Datasheet

 

BU3150T Datasheet and Replacement


   Type Designator: BU3150T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220A
      - BJT Cross-Reference Search

   

BU3150T Datasheet (PDF)

 ..1. Size:113K  jdsemi
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BU3150T

RBU3150T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer aided power and Switch-mode power supplies 222FEATURES 2 Hi

 8.1. Size:78K  shenzhen
 bu3150.pdf pdf_icon

BU3150T

TEL0755-29799516FAX0755-29799515Shenzhen Jingdao Electronic Co.,Ltd. Http://www.jdsemi.cnBU3150 NPN

 8.2. Size:272K  shantou-huashan
 hbu3150a.pdf pdf_icon

BU3150T

N P N S I L I C O N T R A N S I S T O R HBU3150A BU3150 Ta=25 TO-220 Tstg -65~150T

 8.3. Size:114K  jdsemi
 bu3150f.pdf pdf_icon

BU3150T

RBU3150F www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerComputer aided power and Switch-mode power supplies 222FEATURE

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