1165905 Datasheet, Equivalent, Cross Reference Search
Type Designator: 1165905
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 160 pF
Forward Current Transfer Ratio (hFE), MIN: 75
1165905 Transistor Equivalent Substitute - Cross-Reference Search
1165905 Datasheet (PDF)
0.1. 1165905.pdf 
Size:165K _no
1165905T-NPN, Si, darlington with base-emitter speedup diodeFeatures: Continuous collector current-IC = 60 AApplications:Switching regulatorsInvertersSolenoid and relay driversAC and DC motor controlsDescription:TO-3The MJ10021 is a darlington transistor in a TO-3 type package designed for high-voltage,high-speed, power switching in inductive circuits where fall time
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
