All Transistors. 1165905 Datasheet

 

1165905 Datasheet, Equivalent, Cross Reference Search

Type Designator: 1165905

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 160 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO204AA TO3

1165905 Transistor Equivalent Substitute - Cross-Reference Search

 

1165905 Datasheet (PDF)

0.1. 1165905.pdf Size:165K _no

1165905
1165905

1165905T-NPN, Si, darlington with base-emitter speedup diodeFeatures: Continuous collector current-IC = 60 AApplications:Switching regulatorsInvertersSolenoid and relay driversAC and DC motor controlsDescription:TO-3The MJ10021 is a darlington transistor in a TO-3 type package designed for high-voltage,high-speed, power switching in inductive circuits where fall time

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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