1165905 Specs and Replacement
Type Designator: 1165905
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 160 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO204AA TO3
1165905 Substitution
1165905 detailed specifications
1165905.pdf
1165905 T-NPN, Si, darlington with base-emitter speedup diode Features Continuous collector current-IC = 60 A Applications Switching regulators Inverters Solenoid and relay drivers AC and DC motor controls Description TO-3 The MJ10021 is a darlington transistor in a TO-3 type package designed for high-voltage, high-speed, power switching in inductive circuits where fall time ... See More ⇒
Detailed specifications: WT5651 , WT5652 , 13003 , 13003A , 13003C , 13003D , 13003E , 13003F , TIP122 , 3CA3505 , 3CA2505 , 3CA4505 , 3CA5322 , 3CA5323 , 3CA5679 , 3CA5680 , 3CA5781 .
History: 2N5153L
Keywords - 1165905 transistor specs
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History: 2N5153L
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