STLD128DNT4 Datasheet. Specs and Replacement
Type Designator: STLD128DNT4 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO252
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STLD128DNT4 Substitution
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STLD128DNT4 datasheet
STL128DN High voltage fast-switching NPN power transistor Features TAB High voltage capability Low spread of dynamic parameters Very high switching speed 3 3 Large RBSOA 2 2 1 1 Integrated antiparallel collector-emitter diode TO-220 TO-220FP TAB Applications Electronic ballast for fluorescent lighting 3 1 Flyback and forward single transistor low ... See More ⇒
Detailed specifications: STC03DE220HV, STC04IE170HP, STC04IE170HV, STF22907GW, STI13005-1, STI13005H, STL128DFP, STL128DNFP, BD135, STD01N, STD01P, STD127DT4, STD13005I, STD840DN40, STD845DN40, STE07DE220, STA301A
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BJT Parameters and How They Relate
History: NB211YX | KRA760E | KRC107S | NB211YI | STL128DN | KRC113S | KRA759U
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