All Transistors. 3DA3209 Datasheet

 

3DA3209 Datasheet and Replacement


   Type Designator: 3DA3209
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92L
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3DA3209 Datasheet (PDF)

 ..1. Size:283K  foshan
ktc3209 3da3209.pdf pdf_icon

3DA3209

KTC3209(3DA3209) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, KTA1281(3CA1281) Features: Low saturation voltage, high speed switching time, complementary to KTA1281(3CA1281). /Absolute maximum ratings(Ta=25)

 9.1. Size:146K  china
3da325 2sd325.pdf pdf_icon

3DA3209

3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55~150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB

 9.2. Size:214K  foshan
2sc3279 3da3279.pdf pdf_icon

3DA3209

2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. : Features: High DC current gain and excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25) Symbol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PNTET50V01 | SBF13007-O | GES6004 | BL10N15A | PBHV8540T | RCA1A03 | RCA1A04

Keywords - 3DA3209 transistor datasheet

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