3DA882 Datasheet. Specs and Replacement
Type Designator: 3DA882 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126
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3DA882 datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DA882 TRANSISTOR (NPN) TO 126 FEATURES 1. BASE Low Speed Switching Complement to 3CA772 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-... See More ⇒
isc Silicon NPN Power Transistor 3DA882 DESCRIPTION High Collector Current-I = 3.0A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Complement to Type 3CA772 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage reg... See More ⇒
Detailed specifications: 3DA8E, 3DA80A, 3DA80B, 3DA80C, 3DA87A, 3DA87B, 3DA87C, 3DA87D, D667, 3DA96A, 3DA96B, 3DA96C, 3DA3902, 3DA3942, 3DA4002, 3DA5A, 3DA5B
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