3DA882 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA882
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
3DA882 Transistor Equivalent Substitute - Cross-Reference Search
3DA882 Datasheet (PDF)
3da882.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DA882 TRANSISTOR (NPN) TO 126 FEATURES 1. BASE Low Speed Switching Complement to 3CA772 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-
3da882.pdf
isc Silicon NPN Power Transistor 3DA882DESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEComplement to Type 3CA772Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts audio amplifier,voltage reg
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
