3DA50E Datasheet. Specs and Replacement

Type Designator: 3DA50E  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

  📄📄 Copy 

 3DA50E Substitution

- BJT ⓘ Cross-Reference Search

 

3DA50E datasheet

 9.1. Size:105K  china

 3da5038.pdf pdf_icon

3DA50E

... See More ⇒

 9.2. Size:25K  shaanxi

 3da50.pdf pdf_icon

3DA50E

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒

Detailed specifications: 3DA5D, 3DA5E, 3DA5F, 3DA5G, 3DA50A, 3DA50B, 3DA50C, 3DA50D, BC337, 3DA50F, 3DA50G, 3DA5038, 3DA5109, 3DA56, 3DA58A, 3DA58B, 3DA58C

Keywords - 3DA50E pdf specs

 3DA50E cross reference

 3DA50E equivalent finder

 3DA50E pdf lookup

 3DA50E substitution

 3DA50E replacement