All Transistors. 3DA50E Equivalents Search

 

3DA50E Specs and Replacement


   Type Designator: 3DA50E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

 3DA50E Substitution

   - BJT ⓘ Cross-Reference Search

   

3DA50E detailed specifications

 9.1. Size:105K  china
 3da5038.pdf pdf_icon

3DA50E

... See More ⇒

 9.2. Size:25K  shaanxi
 3da50.pdf pdf_icon

3DA50E

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒

Detailed specifications: 3DA5D , 3DA5E , 3DA5F , 3DA5G , 3DA50A , 3DA50B , 3DA50C , 3DA50D , BC337 , 3DA50F , 3DA50G , 3DA5038 , 3DA5109 , 3DA56 , 3DA58A , 3DA58B , 3DA58C .

Keywords - 3DA50E transistor specs

 3DA50E cross reference
 3DA50E equivalent finder
 3DA50E lookup
 3DA50E substitution
 3DA50E replacement

 

 
Back to Top

 


 
.