3DA608C Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA608C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
3DA608C Transistor Equivalent Substitute - Cross-Reference Search
3DA608C Datasheet (PDF)
3da608.pdf
3DA608 NPN A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CEO ICE=10mA 30 50 80 100 150 200 V V(BR)EBO IEB=5mA 4.0 V VCE=10V VCE=20V VCE=30V ICEO 2.0 mA VCE=40V VCE=60V VCE=80V IC=5.0A VCEsat 1.0 V IB=0.5A VCE=3.
3da608.pdf
isc Silicon NPN Power Transistor 3DA608DESCRIPTIONHigh DC Current Gain-: h : 20-180@I = 7.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT3DA608A 40
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
