All Transistors. 3DA608C Datasheet

 

3DA608C Datasheet and Replacement


   Type Designator: 3DA608C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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3DA608C Datasheet (PDF)

 8.1. Size:112K  china
 3da608.pdf pdf_icon

3DA608C

3DA608 NPN A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CEO ICE=10mA 30 50 80 100 150 200 V V(BR)EBO IEB=5mA 4.0 V VCE=10V VCE=20V VCE=30V ICEO 2.0 mA VCE=40V VCE=60V VCE=80V IC=5.0A VCEsat 1.0 V IB=0.5A VCE=3.

 8.2. Size:242K  inchange semiconductor
 3da608.pdf pdf_icon

3DA608C

isc Silicon NPN Power Transistor 3DA608DESCRIPTIONHigh DC Current Gain-: h : 20-180@I = 7.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT3DA608A 40

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: A1013 | TIP35BF

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