All Transistors. 3CG6517M Datasheet

 

3CG6517M Datasheet and Replacement


   Type Designator: 3CG6517M
   SMD Transistor Code: H3D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SOT23
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3CG6517M Datasheet (PDF)

 ..1. Size:264K  foshan
 2n6517m 3cg6517m.pdf pdf_icon

3CG6517M

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW CT 150 j T -55150 stg /Electrical characteristics(T

 7.1. Size:258K  lzg
 3cg6517.pdf pdf_icon

3CG6517M

2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta=

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NTE2547 | 2SC251 | TTC005 | KT709B2 | CMPTA14E | RN1909 | MRF5175

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