3CG6517M Datasheet. Specs and Replacement

Type Designator: 3CG6517M  📄📄 

SMD Transistor Code: H3D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT23

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3CG6517M datasheet

 ..1. Size:264K  foshan

 2n6517m 3cg6517m.pdf pdf_icon

3CG6517M

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(T... See More ⇒

 7.1. Size:258K  lzg

 3cg6517.pdf pdf_icon

3CG6517M

2N6517(3CG6517) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=... See More ⇒

Detailed specifications: 2N918ADCSM, 2N918DCSM, 2N930UB, 2N6338X, 2N6340X, 2N6341X, 2N6385SMD05, 2N6517M, 2SB817, 2N6546T1, 2N6546T3, 2N6547T1, 2N6547T3, 2N6933, 2N6934, 2N6935, 2N6987U

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