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2SD669-B Specs and Replacement


   Type Designator: 2SD669-B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126

 2SD669-B Transistor Equivalent Substitute - Cross-Reference Search

   

2SD669-B detailed specifications

 0.1. Size:265K  mcc
2sd669-b-c-d 2sd669a-b-c.pdf pdf_icon

2SD669-B

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 7.1. Size:236K  secos
2sd669-669a.pdf pdf_icon

2SD669-B

2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 2.7 0.2 7.6 0.2 FEATURES 1.3 0.2 4.0 0.1 Power dissipation 10.8 0.2 PCM 1mW Tamb=25 O3.1 0.1 Collector current 1 2 3 2.2 0.1 ICM 1.5 A 1.27 0.1 Collector-base voltage 15.5 0.2 V... See More ⇒

 7.2. Size:180K  lge
2sd669-2sd669a to-126.pdf pdf_icon

2SD669-B

2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Low frequency power amplifier complementary pair 1.500 with 2SB649/A 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 0.000 0.300 Symbol Parameter Value Units11.000 VCBO Collector- Base Voltage 180 V 2.... See More ⇒

Detailed specifications: 2SD667L-B , 2SD667L-C , 2SD667L-D , 2SD669A-B , 2SD669A-C , 2SD669AL , 2SD669AM , 2SD669AM-A , C5198 , 2SD669-C , 2SD669-D , 2SD468B , 2SD468C , 2SD601LT1 , 2SD602LT1 , 2SD874AQ , 2SD874AR .

Keywords - 2SD669-B transistor specs

 2SD669-B cross reference
 2SD669-B equivalent finder
 2SD669-B lookup
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