QS5Y2 Datasheet. Specs and Replacement

Type Designator: QS5Y2  📄📄 

SMD Transistor Code: Y02

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TSMT5

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QS5Y2 datasheet

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QS5Y2

Midium Power Transistors ( 50V / 3A) QS5Y2 Structure Dimensions (Unit mm) NPN/PNP Silicon epitaxial planar transistor TSMT5 Features 1) Low saturation voltage, typically VCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA) VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) (1) Base 2) High speed switching (2) Collector (3) Emitter Abbreviated symbol Y02 Applications ... See More ⇒

Detailed specifications: PZTA43, PZTA45, PZTA92T1G, PZTA93, PZTA96ST1G, QS5W1, QS5W2, QS5Y1, 2SC828, QS6Z5, QSH29, QSL10, QSL11, QSL12, QSL9, QST8, QST9

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