QS5Y2 Datasheet, Equivalent, Cross Reference Search
Type Designator: QS5Y2
SMD Transistor Code: Y02
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TSMT5
QS5Y2 Transistor Equivalent Substitute - Cross-Reference Search
QS5Y2 Datasheet (PDF)
..1. Size:459K rohm
qs5y2.pdf
qs5y2.pdf
Midium Power Transistors (50V / 3A) QS5Y2 Structure Dimensions (Unit : mm)NPN/PNP Silicon epitaxial planar transistorTSMT5 Features1) Low saturation voltage, typicallyVCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA)VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA)(1) Base2) High speed switching (2) Collector(3) EmitterAbbreviated symbol : Y02 Applications
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
