All Transistors. QS6Z5 Datasheet

 

QS6Z5 Datasheet and Replacement


   Type Designator: QS6Z5
   SMD Transistor Code: Z05
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 360 MHz
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TSMT6
 

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QS6Z5 Datasheet (PDF)

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QS6Z5

Data SheetComplex Midium Power Transistors (50V/1A) QS6Z5 Structure Dimensions (Unit : mm)NPN/PNP Silicon epitaxial planar transistorTSMT6 Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)(1) Tr.1 BaseVCE (sat) = 0.40V (Max.) (IC / IB= 500mA / 25mA)(2) Tr.2 Emitter(3) Tr.2 Base2) High speed switching(4) Tr.2 Coll

Datasheet: PZTA45 , PZTA92T1G , PZTA93 , PZTA96ST1G , QS5W1 , QS5W2 , QS5Y1 , QS5Y2 , TIP32C , QSH29 , QSL10 , QSL11 , QSL12 , QSL9 , QST8 , QST9 , QSX7 .

History: T1973 | MJE712 | L9014 | TSC124ENND03 | 2SC3828 | 2SA545 | TA1847

Keywords - QS6Z5 transistor datasheet

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