QS6Z5 Datasheet. Specs and Replacement

Type Designator: QS6Z5  📄📄 

SMD Transistor Code: Z05

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 360 MHz

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TSMT6

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QS6Z5 datasheet

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QS6Z5

Data Sheet Complex Midium Power Transistors ( 50V/ 1A) QS6Z5 Structure Dimensions (Unit mm) NPN/PNP Silicon epitaxial planar transistor TSMT6 Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) (1) Tr.1 Base VCE (sat) = 0.40V (Max.) (IC / IB= 500mA / 25mA) (2) Tr.2 Emitter (3) Tr.2 Base 2) High speed switching (4) Tr.2 Coll... See More ⇒

Detailed specifications: PZTA45, PZTA92T1G, PZTA93, PZTA96ST1G, QS5W1, QS5W2, QS5Y1, QS5Y2, 431, QSH29, QSL10, QSL11, QSL12, QSL9, QST8, QST9, QSX7

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