QS6Z5 Datasheet, Equivalent, Cross Reference Search
Type Designator: QS6Z5
SMD Transistor Code: Z05
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 360 MHz
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TSMT6
QS6Z5 Transistor Equivalent Substitute - Cross-Reference Search
QS6Z5 Datasheet (PDF)
..1. Size:622K rohm
qs6z5.pdf
qs6z5.pdf
Data SheetComplex Midium Power Transistors (50V/1A) QS6Z5 Structure Dimensions (Unit : mm)NPN/PNP Silicon epitaxial planar transistorTSMT6 Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)(1) Tr.1 BaseVCE (sat) = 0.40V (Max.) (IC / IB= 500mA / 25mA)(2) Tr.2 Emitter(3) Tr.2 Base2) High speed switching(4) Tr.2 Coll
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
