KC860W Datasheet. Specs and Replacement

Type Designator: KC860W  📄📄 

SMD Transistor Code: 4H*_4F*_4G*

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SOT323

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KC860W datasheet

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KC860W

SMD Type Transistors PNP Transistors BC859W,BC860W (KC859W,KC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC849W and BC850W. C B 1.Base 2.Emitter E 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC859W -30 Collector - Base Voltage VCBO BC860W -50 BC859W -30 V Collector - Emitter Voltag... See More ⇒

 9.1. Size:823K  kexin

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KC860W

SMD Type Transistors PNP Transistors BC859 BC860 (KC859 KC860) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). NPN complements BC849 and BC850. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec... See More ⇒

Detailed specifications: KC858, KC858A, KC858B, KC858C, KC858W, KC859, KC859W, KC860, B647, RN1116F, RN1114FT, RN1115FT, KCP51, KCP52, KCP53, KCP53-16, KCP54

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