All Transistors. TPC5658NND03 Datasheet

 

TPC5658NND03 Datasheet and Replacement


   Type Designator: TPC5658NND03
   SMD Transistor Code: BQ_BR_BS
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: WBFBP-03B
 

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TPC5658NND03 Datasheet (PDF)

 ..1. Size:295K  jiangsu
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TPC5658NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER Excellent hFE linearity BACK 3. COLLECTOR Complementary to TPA2029NND03 E B APPLICATION General Purpose trans

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TPC5658NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TOP TPC5663NND03 TRANSISTOR (1.21.20.5) unit: mm DESCRIPTION B E NPN Epitaxial planar Silicon Transistor C 1. BASE FEATURES BACK 2. EMITTER Collector saturation voltage is low. 3. COLLECTOR VCE (sat) 250mA At IC =200mA / IB =10mA E B APPLI

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: RN1308 | AUY32Z | 2SA517 | ZXTPS718MC | KC818W-40 | PEMD15 | RN1305

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