TPC5658NND03 Datasheet. Specs and Replacement

Type Designator: TPC5658NND03  📄📄 

SMD Transistor Code: BQ_BR_BS

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: WBFBP-03B

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TPC5658NND03 datasheet

 ..1. Size:295K  jiangsu

 tpc5658nnd03.pdf pdf_icon

TPC5658NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER Excellent hFE linearity BACK 3. COLLECTOR Complementary to TPA2029NND03 E B APPLICATION General Purpose trans... See More ⇒

 9.1. Size:304K  jiangsu

 tpc5663nnd03.pdf pdf_icon

TPC5658NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TOP TPC5663NND03 TRANSISTOR (1.2 1.2 0.5) unit mm DESCRIPTION B E NPN Epitaxial planar Silicon Transistor C 1. BASE FEATURES BACK 2. EMITTER Collector saturation voltage is low. 3. COLLECTOR VCE (sat) 250mA At IC =200mA / IB =10mA E B APPLI... See More ⇒

Detailed specifications: KTC3199-O, KTC3199-Y, KTC3205-O, KTC3205-Y, KTC3880LT1, TPA2029NND03, TPA2030NND03, TPC2715NND03, A1015, TPC5663NND03, TPC6901, TPC6901A, TPC6902, TPCP8902, TPCP8F01, TPCP8G01, KTC3875-GR

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