TFN1036 Datasheet. Specs and Replacement

Type Designator: TFN1036  📄📄 

SMD Transistor Code: 2T

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: SOT23

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TFN1036 datasheet

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TFN1036

Tin Far Electronic CO.,LTD Page No 1/6 TFN1036 Description The TFN1036 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. Complementary to TFN2411. Pb-free package Symbol Outline TFN1036 SOT-23 B Base C Collector E Emitter Absolute... See More ⇒

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TFN1036

Tin Far Electronic CO.,LTD Page No 1/4 TFN1037 50V 150mA PNP TRANSISTOR Description The TFN1037 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent hFE linearity Complementary to TFN2412. Equivalent Circuit TFN1037 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol ... See More ⇒

Detailed specifications: TTC017, TTC3710B, TTC5460B, TTD1409B, TTD1410B, TTD1415B, TTD1509B, TFM1759, D965, TFN1037, TFN1386L, TFN1424, TFN1514, TFN1590, TFN1721, TFN1759, TFN1768

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