All Transistors. 2N676 Datasheet

 

2N676 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N676
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 30 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3

 2N676 Transistor Equivalent Substitute - Cross-Reference Search

   

2N676 Datasheet (PDF)

 0.1. Size:142K  1
2n6766.pdf

2N676
2N676

 0.2. Size:140K  1
2n6768.pdf

2N676
2N676

 0.3. Size:140K  1
2n6764.pdf

2N676
2N676

 0.4. Size:146K  international rectifier
2n6762 irf430.pdf

2N676
2N676

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 0.5. Size:144K  international rectifier
2n6768 irf350.pdf

2N676
2N676

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 0.6. Size:146K  international rectifier
2n6760 irf330.pdf

2N676
2N676

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 0.7. Size:145K  international rectifier
2n6766 irf250.pdf

2N676
2N676

PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique

 0.8. Size:140K  fairchild semi
2n6763.pdf

2N676
2N676

 0.9. Size:140K  fairchild semi
2n6767.pdf

2N676
2N676

 0.10. Size:142K  fairchild semi
2n6765.pdf

2N676
2N676

 0.11. Size:137K  fairchild semi
2n6761 2n6762.pdf

2N676
2N676

 0.12. Size:137K  fairchild semi
2n6769.pdf

2N676
2N676

 0.13. Size:138K  fairchild semi
2n6759 2n6760.pdf

2N676
2N676

 0.14. Size:64K  omnirel
2n6764 2n6766 2n6768 2n6770.pdf

2N676
2N676

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION

Datasheet: 2N6739 , 2N674 , 2N6740 , 2N675 , 2N6751 , 2N6752 , 2N6753 , 2N6754 , 2N5401 , 2N677 , 2N6771 , 2N6772 , 2N6773 , 2N6774 , 2N6775 , 2N6776 , 2N677A .

 

 
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