2N676 PDF and Equivalents Search

 

2N676 PDF Specs and Replacement


   Type Designator: 2N676
   Material of Transistor: Ge
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 30 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 140 °C

Electrical Characteristics


   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3
 

 2N676 Substitution

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2N676 PDF detailed specifications

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 0.4. Size:146K  international rectifier
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2N676

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

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Detailed specifications: 2N6739 , 2N674 , 2N6740 , 2N675 , 2N6751 , 2N6752 , 2N6753 , 2N6754 , 2N2222 , 2N677 , 2N6771 , 2N6772 , 2N6773 , 2N6774 , 2N6775 , 2N6776 , 2N677A .

History: 2N3321 | 2N34A | 2N743 | DTD143EK | DTL1636

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