All Transistors. 2N676 Datasheet

 

2N676 Datasheet and Replacement


   Type Designator: 2N676
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 30 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 0.4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3
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2N676 Datasheet (PDF)

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 2n6766.pdf pdf_icon

2N676

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 2n6768.pdf pdf_icon

2N676

 0.3. Size:140K  1
 2n6764.pdf pdf_icon

2N676

 0.4. Size:146K  international rectifier
 2n6762 irf430.pdf pdf_icon

2N676

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

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Datasheet: 2N6739 , 2N674 , 2N6740 , 2N675 , 2N6751 , 2N6752 , 2N6753 , 2N6754 , 2N3055 , 2N677 , 2N6771 , 2N6772 , 2N6773 , 2N6774 , 2N6775 , 2N6776 , 2N677A .

History: 2N5094 | 2SA1318R | 2SA1347 | 2N5415 | 2N5095 | 2N3678 | 2N5007

Keywords - 2N676 transistor datasheet

 2N676 cross reference
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