All Transistors. A608N Datasheet

 

A608N Datasheet and Replacement


   Type Designator: A608N
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO92
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A608N Datasheet (PDF)

 ..1. Size:242K  china
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A608N

A608N PNP silicon APPLICATIONFrequency Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltageVCBO -50 VCollector-emitter voltageVCEO -50 VEmitter-base voltage VEBO -6 VCollector currentIC -150 mACollector Power DissipationICP -400 mAJunction TemperaturePC 500 mWJunction Tempera

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A608N

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A608N

Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441

 0.3. Size:77K  secos
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A608N

2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G HAPPLICATIONS EmitterCollector Capable of being used in the low frequency to Base Jhigh frequency range. A DMillimeterREF.B Min.

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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