A608N Specs and Replacement
Type Designator: A608N
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO92
A608N Substitution
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A608N datasheet
A608N PNP silicon APPLICATION Frequency Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -150 mA Collector Power Dissipation ICP -400 mA Junction Temperature PC 500 mW Junction Tempera... See More ⇒
Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒
2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G H APPLICATIONS Emitter Collector Capable of being used in the low frequency to Base J high frequency range. A D Millimeter REF. B Min.... See More ⇒
Detailed specifications: A1037 , A1037AK , A1048 , A1048S , A539 , A562 , A564 , A608 , 2SC1815 , A614 , A673 , A684 , A695 , A1150 , A1160 , A1162 , A1163 .
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