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A1160 Specs and Replacement

Type Designator: A1160

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO92L

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A1160 datasheet

 ..1. Size:248K  fgx

 a1160.pdf pdf_icon

A1160

A1160 PNP silicon APPLICATION Medium Power Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V TO-92L 1 Emitter-base voltage VEBO -6 V 1. Emitter 2. Collector 3. Base Collector current IC -2 A Collector Power Dissipation PC 900 mW Junct... See More ⇒

 0.1. Size:178K  toshiba

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A1160

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Detailed specifications: A564 , A608 , A608N , A614 , A673 , A684 , A695 , A1150 , TIP35C , A1162 , A1163 , A1175 , A1182 , A1213 , A1241 , A1246 , A1255 .

History: A608N

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