A1160 Datasheet. Specs and Replacement

Type Designator: A1160  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO92L

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A1160 datasheet

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A1160

A1160 PNP silicon APPLICATION Medium Power Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V TO-92L 1 Emitter-base voltage VEBO -6 V 1. Emitter 2. Collector 3. Base Collector current IC -2 A Collector Power Dissipation PC 900 mW Junct... See More ⇒

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A1160

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Detailed specifications: A564, A608, A608N, A614, A673, A684, A695, A1150, A940, A1162, A1163, A1175, A1182, A1213, A1241, A1246, A1255

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