A1160 Datasheet, Equivalent, Cross Reference Search
Type Designator: A1160
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO92L
A1160 Transistor Equivalent Substitute - Cross-Reference Search
A1160 Datasheet (PDF)
..1. Size:248K fgx
a1160.pdf
a1160.pdf
A1160 PNP silicon APPLICATION: Medium Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO -10 VTO-92L1Emitter-base voltage VEBO -6 V1. Emitter 2. Collector 3. BaseCollector current IC -2 ACollector Power Dissipation PC 900 mWJunct
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
