A1255 Specs and Replacement
Type Designator: A1255
SMD Transistor Code: MO_MY
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SOT23
A1255 Substitution
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A1255 datasheet
A1255 APPLICATION High Voltage Switching Applications. PNP silicon MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA 1 Collector Power Dissipation PC 150 mW 2 Junction Temperature TJ 150 Storage Temperat... See More ⇒
2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit mm High voltage VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V... See More ⇒
Detailed specifications: A1160 , A1162 , A1163 , A1175 , A1182 , A1213 , A1241 , A1246 , 2SC2625 , A1266 , A1267 , A1267S , A1270 , A1271 , A1273 , A1273A , A1276 .
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