All Transistors. A1255 Datasheet

 

A1255 Datasheet and Replacement


   Type Designator: A1255
   SMD Transistor Code: MO_MY
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
 

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A1255 Datasheet (PDF)

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A1255

A1255 APPLICATION:High Voltage Switching Applications. PNP silicon MAXIMUM RATINGSTa25 PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 VEmitter-base voltage VEBO -5 VCollector current IC -50 mA 1Collector Power Dissipation PC 150 mW2Junction Temperature TJ 150Storage Temperat

 0.1. Size:249K  toshiba
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A1255

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit: mm High voltage: VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: C106 | 2SA1832O | 2SD2625Z9 | 2SA1827 | CTLT8099-M322S | NSBC123TPDP6 | KT3130A9

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