A1255 Datasheet, Equivalent, Cross Reference Search
Type Designator: A1255
SMD Transistor Code: MO_MY
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT23
A1255 Transistor Equivalent Substitute - Cross-Reference Search
A1255 Datasheet (PDF)
a1255.pdf
A1255 APPLICATION:High Voltage Switching Applications. PNP silicon MAXIMUM RATINGSTa25 PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 VEmitter-base voltage VEBO -5 VCollector current IC -50 mA 1Collector Power Dissipation PC 150 mW2Junction Temperature TJ 150Storage Temperat
2sa1255.pdf
2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit: mm High voltage: VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 V
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
