A1255 Datasheet. Specs and Replacement

Type Designator: A1255  📄📄 

SMD Transistor Code: MO_MY

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT23

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A1255 datasheet

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A1255

A1255 APPLICATION High Voltage Switching Applications. PNP silicon MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA 1 Collector Power Dissipation PC 150 mW 2 Junction Temperature TJ 150 Storage Temperat... See More ⇒

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A1255

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit mm High voltage VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V... See More ⇒

Detailed specifications: A1160, A1162, A1163, A1175, A1182, A1213, A1241, A1246, 2SC2655, A1266, A1267, A1267S, A1270, A1271, A1273, A1273A, A1276

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