A1317S Datasheet. Specs and Replacement

Type Designator: A1317S  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92S

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A1317S datasheet

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A1317S

A1317S PNP Silicon PNP Transistors APPLICATION Frequency Applications. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT VCBO -60 V Collector-base voltage VCEO -50 V Collector-emitter voltage VEBO -6 V Emitter-base voltage Ic -0.2 A Collector current Icp -0.4 A Pc 0.3 Collector Power Dissipation W Tj 150 Junction Tem... See More ⇒

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 2sa1317 2sc3330.pdf pdf_icon

A1317S

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 a1317.pdf pdf_icon

A1317S

A1317 PNP silicon APPLICATION Loe frequency Amplifier Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -200 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Te... See More ⇒

Detailed specifications: A1276, A1296, A1297, A1298, A1300, A1309, A1313, A1317, 2SC5198, A1320, A1357, A1480, A1504, A1505, A1517, A1585, A1585S

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