A1317S Datasheet, Equivalent, Cross Reference Search
Type Designator: A1317S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92S
A1317S Transistor Equivalent Substitute - Cross-Reference Search
A1317S Datasheet (PDF)
a1317s.pdf
A1317S PNP SiliconPNP Transistors APPLICATIONFrequency Applications. MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITVCBO -60 VCollector-base voltageVCEO -50 VCollector-emitter voltageVEBO -6 VEmitter-base voltage Ic -0.2 ACollector currentIcp -0.4 APc 0.3Collector Power Dissipation WTj 150Junction Tem
a1317.pdf
A1317 PNP silicon APPLICATIONLoe frequency Amplifier Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -6 VCollector current IC -200 mACollector Power Dissipation PC 300 mWJunction Temperature TJ 150Storage Te
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
