A3355 Datasheet, Equivalent, Cross Reference Search
Type Designator: A3355
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4500 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT23 TO92
A3355 Transistor Equivalent Substitute - Cross-Reference Search
A3355 Datasheet (PDF)
..1. Size:280K ait semi
a3355.pdf
a3355.pdf
AiT Semiconductor Inc. A3355 www.ait-ic.com 200mA, 4.5GHz, 12V, NPN SILICON EPITAXIAL HIGH FREQUENCY RF TRANSISTOR DESCRIPTION FEATURES The A3355 is an NPN silicon Epitaxial Transistor. It Collector Current: 200mA (Max) has High frequency. High Frequency: 4.5GHz (Typ) Collector-Emitter Voltage: 12V The A3355 is available in SOT-23 and TO-92 Low noise and high gain
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
