A3355 Datasheet. Specs and Replacement

Type Designator: A3355  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4500 MHz

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT23 TO92

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A3355 datasheet

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A3355

AiT Semiconductor Inc. A3355 www.ait-ic.com 200mA, 4.5GHz, 12V, NPN SILICON EPITAXIAL HIGH FREQUENCY RF TRANSISTOR DESCRIPTION FEATURES The A3355 is an NPN silicon Epitaxial Transistor. It Collector Current 200mA (Max) has High frequency. High Frequency 4.5GHz (Typ) Collector-Emitter Voltage 12V The A3355 is available in SOT-23 and TO-92 Low noise and high gain... See More ⇒

Detailed specifications: A1585S, A1586, A1587, A1588, A1621, A1663, A2071, A327A, MPSA42, A708, A720, A751, A773, A817, A838, A844, A9015

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