All Transistors. A3355 Datasheet

 

A3355 Datasheet and Replacement


   Type Designator: A3355
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT23 TO92
 

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A3355 Datasheet (PDF)

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A3355

AiT Semiconductor Inc. A3355 www.ait-ic.com 200mA, 4.5GHz, 12V, NPN SILICON EPITAXIAL HIGH FREQUENCY RF TRANSISTOR DESCRIPTION FEATURES The A3355 is an NPN silicon Epitaxial Transistor. It Collector Current: 200mA (Max) has High frequency. High Frequency: 4.5GHz (Typ) Collector-Emitter Voltage: 12V The A3355 is available in SOT-23 and TO-92 Low noise and high gain

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: C106 | 2SA1832O | CTLT8099-M322S | NSBC123TPDP6 | 2SD2625Z9 | 2SA1827 | KT3130A9

Keywords - A3355 transistor datasheet

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