All Transistors. A3355 Datasheet

 

A3355 Datasheet and Replacement


   Type Designator: A3355
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT23 TO92
 

 A3355 Substitution

   - BJT ⓘ Cross-Reference Search

   

A3355 Datasheet (PDF)

 ..1. Size:280K  ait semi
 a3355.pdf pdf_icon

A3355

AiT Semiconductor Inc. A3355 www.ait-ic.com 200mA, 4.5GHz, 12V, NPN SILICON EPITAXIAL HIGH FREQUENCY RF TRANSISTOR DESCRIPTION FEATURES The A3355 is an NPN silicon Epitaxial Transistor. It Collector Current: 200mA (Max) has High frequency. High Frequency: 4.5GHz (Typ) Collector-Emitter Voltage: 12V The A3355 is available in SOT-23 and TO-92 Low noise and high gain

Datasheet: A1585S , A1586 , A1587 , A1588 , A1621 , A1663 , A2071 , A327A , B647 , A708 , A720 , A751 , A773 , A817 , A838 , A844 , A9015 .

History: KSB772G

Keywords - A3355 transistor datasheet

 A3355 cross reference
 A3355 equivalent finder
 A3355 lookup
 A3355 substitution
 A3355 replacement

 

 
Back to Top

 


 
.