All Transistors. HB857 Datasheet

 

HB857 Datasheet and Replacement


   Type Designator: HB857
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15(TYP) MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 HB857 Substitution

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HB857 Datasheet (PDF)

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HB857

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB857 APPLICATIONS LOW FREQUENCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

Datasheet: H772 , H882 , HA1011 , HA1837 , HA940 , HB123D , HB1274 , HB834 , TIP41 , HBD195 , HBD196 , HBD241C , HBD435 , HBD436 , HBD681 , HBD682 , HBDW93C .

Keywords - HB857 transistor datasheet

 HB857 cross reference
 HB857 equivalent finder
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