HB857 Datasheet. Specs and Replacement

Type Designator: HB857  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 typ MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

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HB857 datasheet

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HB857

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Detailed specifications: H772, H882, HA1011, HA1837, HA940, HB123D, HB1274, HB834, 2N5401, HBD195, HBD196, HBD241C, HBD435, HBD436, HBD681, HBD682, HBDW93C

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