H5551 Datasheet. Specs and Replacement

Type Designator: H5551  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

  📄📄 Copy 

 H5551 Substitution

- BJT ⓘ Cross-Reference Search

 

H5551 datasheet

 ..1. Size:103K  shantou-huashan

 h5551.pdf pdf_icon

H5551

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage Vceo=160V. CollectorDissipation Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 ... See More ⇒

Detailed specifications: H422, H423, H5342, H5401, H546, H547, H548, H549, 2222A, H556, H557, H558, H5609, H5610, H562, H639, H643

Keywords - H5551 pdf specs

 H5551 cross reference

 H5551 equivalent finder

 H5551 pdf lookup

 H5551 substitution

 H5551 replacement