H5551 Datasheet, Equivalent, Cross Reference Search
Type Designator: H5551
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92
H5551 Transistor Equivalent Substitute - Cross-Reference Search
H5551 Datasheet (PDF)
..1. Size:103K shantou-huashan
h5551.pdf
h5551.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
