All Transistors. H5551 Datasheet

 

H5551 Datasheet and Replacement


   Type Designator: H5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO92
 

 H5551 Substitution

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H5551 Datasheet (PDF)

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H5551

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150

Datasheet: H422 , H423 , H5342 , H5401 , H546 , H547 , H548 , H549 , SS8050 , H556 , H557 , H558 , H5609 , H5610 , H562 , H639 , H643 .

History: NPS2713 | STD1862L | BFW97L | 2SD201 | BFV88E | KT973V | KRC119S

Keywords - H5551 transistor datasheet

 H5551 cross reference
 H5551 equivalent finder
 H5551 lookup
 H5551 substitution
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